Silicon ingots
We produce semiconductor grade silicon ingots with diameter from 2” up to 8” in quantity more than 200 000kg per year.
Basic parameters of silicon ingots for semiconductor application:
| Growth metod | CZ |
| Type/Dopant | N-type /Phosphorus or Antimony or Arsenic doped P-type /Boron doped |
| Diameter | from 2″ – to 8″ |
|
Orientation |
(100) or (111) or (110) |
|
Resistivity |
0,001 – 140 Ohm*cm |
|
Oxygen content |
<10*1017 at/cm3 (<20ppma) – standard |
|
Carbon content |
<10*1016 at/cm3 (<2ppma) – standard |
|
Dislocation density |
<10cm-2 |
