Silicon ingots

We produce semiconductor grade silicon ingots with diameter from 2” up to 8” in quantity more than 200 000kg per year.

Basic parameters of silicon ingots for semiconductor application:

Growth metod CZ
Type/Dopant N-type /Phosphorus or Antimony or Arsenic doped P-type /Boron doped
Diameter from 2″ – to 8″

Orientation

(100) or (111) or (110)

Resistivity

0,001 – 140 Ohm*cm

Oxygen content

<10*1017 at/cm3 (<20ppma) – standard
(7-9)*1017 at/cm3 (14-18 ppma) – special

Carbon content

<10*1016 at/cm3 (<2ppma) – standard
<5*1016 at/cm3 (<1ppma) – special

Dislocation density

<10cm-2

 

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