Silicon wafers

We produce semiconductor grade silicon wafers with diameter from 2” up to 6” in quantity up to 500 000pcs per year.

Also we have possibility to produce polished wafers with square and pseudosquare shape in accordance to customer’s specification.

Our basic wafers parameters meet SEMI M1-00 standard.

Basic parameters of semiconductor grade silicon wafers

Type/Dopant N-type /Phosphorus or Antimony or Arsenic doped P-type /Boron doped
Diameter 2″, 3″, 4″, 5″, 6″
Diameter tolerance minimum ±0,3 mm standard ±0,5 mm
Orientation (100), (111), (110)
Resistivity 0,001 – 140 Ohm*cm
Total thickness variation

 
for diameter 2″

for diameter 3″

for diameter 4″

for diameter 5″

for diameter 6″

MINIMUM:

5 microns

5 microns

5 microns

8 microns

15 microns

STANDARD:

10 microns

10 microns

15 microns

15 microns

20 microns

Bow

 

for diameter 2″

for diameter 3″

for diameter 4″

for diameter 5″

for diameter 6″

MINIMUM:

20 microns

25 microns

30 microns

35 microns

50 microns

STANDARD:

25 microns

30 microns

35 microns

40 microns

60 microns

Surface As-cut, lapped, etched, one side and double side polished
Oxygen content <10*1017 at/cm3 (<20ppma) – standard
(7-9)*1017 at/cm3 (14-18 ppma) – special
Carbon content <10*1016 at/cm3 (<2ppma) – standard
<5*1016 at/cm3 (<1ppma) – special

 

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