Silicon wafers
We produce semiconductor grade silicon wafers with diameter from 2” up to 6” in quantity up to 500 000pcs per year.
Also we have possibility to produce polished wafers with square and pseudosquare shape in accordance to customer’s specification.
Our basic wafers parameters meet SEMI M1-00 standard.
Basic parameters of semiconductor grade silicon wafers
| Type/Dopant | N-type /Phosphorus or Antimony or Arsenic doped P-type /Boron doped | |||
| Diameter | 2″, 3″, 4″, 5″, 6″ | |||
| Diameter tolerance | minimum ±0,3 mm standard ±0,5 mm | |||
| Orientation | (100), (111), (110) | |||
| Resistivity | 0,001 – 140 Ohm*cm | |||
| Total thickness variation |
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| Surface | As-cut, lapped, etched, one side and double side polished | |||
| Oxygen content | <10*1017 at/cm3 (<20ppma) – standard (7-9)*1017 at/cm3 (14-18 ppma) – special |
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| Carbon content | <10*1016 at/cm3 (<2ppma) – standard <5*1016 at/cm3 (<1ppma) – special |
